A Large Signal Model for High Power HBTs and BJTs
نویسندگان
چکیده
Abstract — A new, simple large signal model for high power HBTs and BJTs suitable for CAD tools is proposed and experimentally evaluated. The major features of the model are that main model parameters are determined directly from measurements in typical operating conditions and that the model exhibits good convergence properties. The model was evaluated with extensive DC, S parameter, and power spectrum measurements. Good correspondence was obtained between measurements and simulations.
منابع مشابه
POWER PERFORMANCE OF PNP InAlAs/InGaAs HBTs
Recently, small-signal microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1, 2]. While power performance of PNP AlGaAs/GaAs HBTs has been demonstrated [3], nothing has been reported on power performance of PNP HBTs in the InP material system. In this work, InAlAs/InGaAs PNP HBTs were fabricated and subsequently characterized under large signal conditions at X-band to determine ...
متن کاملNoise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs
We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices.
متن کاملSelf-consistent Fully Dynamic Electro-thermal Simulation of Power Hbts
A new self-consistent dynamic electro-thermal model for power HBTs is presented coupling a circuit-oriented electrical model, fitted on experimental data, with a full frequency domain thermal model. The thermal model provides the exact frequency behaviour of the device thermal impedance through a quasi-3D approach. The electro-thermal self-consistent solution is achieved, in large-signal period...
متن کاملHigh-injection barrier effects in SiGe HBTs operating at cryogenic temperatures
We demonstrate that high-injection barrier effects associated with the collector-base silicon-germanium (SiGe) to silicon (Si) heterojunction are an important design constraint for SiGe heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. Due to its thermally activated nature, these barrier effects can have important dc and ac consequences at cryogenic temperatures eve...
متن کاملDevelopment of Average Model for Control of a Full Bridge PWM DC-DC Converter
This paper presents a detailed small-signal and transient analysis of a full bridge PWM DC-DC converter designed for high voltage, high power applications using an average model. The derived model is implemented in a typical system and used to produce the small-signal and transient characteristics of the converter. Results obtained in the analysis of the high voltage and high power design examp...
متن کامل